K4S280832K Datasheet, PDF (8/15 Pages) Samsung semiconductor – 128Mb K-die SDRAM Specification

K4S280832K
K4S281632K
Synchronous DRAM
8.0 Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V_SS
Voltage on V_DD supply relative to V_SS
Storage temperature
Power dissipation
Short circuit current
Symbol
V_IN, V_OUT
V_DD, V_DDQ
T_STG
P_D
I_OS
Value
-1.0 ~ 4.6
-1.0 ~ 4.6
-55 ~ +150
1
50
Note : Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
Unit
V
V
°C
W
mA
9.0 DC Operating Conditions
Recommended operating conditions (Voltage referenced to V_SS = 0V, T_A = 0 to 70°C)
Parameter
Symbol
Min
Typ
Max
Supply voltage
V_DD, V_DDQ
3.0
3.3
3.6
Input logic high voltage
V_IH
2.0
3.0
V_DD+0.3
Input logic low voltage
V_IL
-0.3
0
0.8
Output logic high voltage
V_OH
2.4
-
-
Output logic low voltage
V_OL
-
-
0.4
Input leakage current
I_LI
-10
-
10
Notes : 1. V_IH (max) = 5.6V AC. The overshoot voltage duration is ≤ 3ns.
2. V_IL (min) = -2.0V AC. The undershoot voltage duration is ≤ 3ns.
3. Any input 0V ≤ V_IN ≤ V_DDQ.
Input leakage currents include Hi-Z output leakage for all bi-directional buffers with Tri-State outputs.
Unit
V
V
V
V
V
uA
Note
1
2
I_OH = -2mA
I_OL = 2mA
3
10.0 Capacitance
Pin
Clock
RAS, CAS, WE, CS, CKE, DQM
Address
(x8 : DQ0 ~ DQ7), (x16 : DQ0 ~ DQ15)
(V_DD = 3.3V, T_A = 23°C, f = 1MHz, V_REF =1.4V ± 200 mV)
Symbol
Min
Max
Unit
C_CLK
2.5
3.5
pF
C_IN
2.5
3.8
pF
C_ADD
2.5
3.8
pF
C_OUT
4.0
6.0
pF
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Rev. 1.23 March 2009