K4S280832K Datasheet, PDF (13/15 Pages) Samsung semiconductor – 128Mb K-die SDRAM Specification

K4S280832K
K4S281632K
17.0 IBIS Specification
IOH Characteristics (Pull-up)
200MHz
Voltage
166MHz
133MHz
Min
(V)
I (mA)
3.45
3.3
3.0
0.0
2.6
-21.1
2.4
-34.1
2.0
-58.7
1.8
-67.3
1.65
-73.0
1.5
-77.9
1.4
-80.8
1.0
-88.6
0.0
-93.0
200MHz
166MHz
133MHz
Max
I (mA)
-2.4
-27.3
-74.1
-129.2
-153.3
-197.0
-226.2
-248.0
-269.7
-284.3
-344.5
-502.4
IOL Characteristics (Pull-down)
200MHz
Voltage
166MHz
133MHz
Min
(V)
I (mA)
0.0
0.0
0.4
27.5
0.65
41.8
0.85
51.6
1.0
58.0
1.4
70.7
1.5
72.9
1.65
75.4
1.8
77.0
1.95
77.6
3.0
80.3
3.45
81.4
200MHz
166MHz
133MHz
Max
I (mA)
0.0
70.2
107.5
133.8
151.2
187.7
194.4
202.5
208.6
212.0
219.6
222.6
Synchronous DRAM
200MHz/166MHz /133MHz Pull-up
0 0.5 1 1.5 2 2.5 3 3.5
0
-100
-200
-300
-400
-500
-600
Voltage
IOH Min (200MHz/166MHz/133MHz)
IOH Max (200MHz/166MHz/133MHz)
200MHz/166MHz /133MHz Pull-down
250
200
150
100
50
0
0 0.5 1 1.5 2 2.5 3 3.5
Voltage
IOH Min (200MHz/166MHz/133MHz)
IOH Max (200MHz/166MHz/133MHz)
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Rev. 1.23 March 2009