K4S280832K Datasheet, PDF (12/15 Pages) Samsung semiconductor – 128Mb K-die SDRAM Specification

K4S280832K
K4S281632K
Synchronous DRAM
15.0 AC Characteristics
(AC operating conditions unless otherwise noted)
Parameter
CLK cycle time
CLK to valid
output delay
Output data
hold time
CLK high pulse width
CLK low pulse width
Input setup time
Input hold time
CLK to output in Low-Z
CLK to output
in Hi-Z
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
CAS latency=3
CAS latency=2
Symbol
tCC
tSAC
tOH
tCH
tCL
tSS
tSH
tSLZ
tSHZ
50 (x16 only)
Min
Max
5
1000
-
-
4.5
-
-
2
-
-
-
2
-
2
-
1.5
-
1
-
1
-
-
4.5
-
-
60 (x16 only)
Min
Max
6
1000
-
5
-
2.5
-
2.5
2.5
1.5
1
1
5
-
75
Min
Max
7.5
1000
10
5.4
6
3
3
2.5
2.5
1.5
0.8
1
5.4
6
Notes : _{1. Parameters depend on programmed CAS latency.}
2. If clock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter.
3. Assumed input rise and fall time (tr & tf) = 1ns.
If tr & tf is longer than 1ns, transient time compensation should be considered,
i.e., [(tr + tf)/2-1]ns should be added to the parameter.
4. tSS applies for address setup time, clock enable setup time, commend setup time and data setup time
tSH applies for address holde time, clock enable hold time, commend hold time and data hold time
16.0 DQ Buffer Output Drive Characteristics
Parameter
Output rise time
Output fall time
Output rise time
Output fall time
Symbol
Condition
Min
Typ
trh
Measure in linear
region : 1.2V ~ 1.8V
1.37
tfh
Measure in linear
region : 1.2V ~ 1.8V
1.30
trh
Measure in linear
region : 1.2V ~ 1.8V
2.8
3.9
tfh
Measure in linear
region : 1.2V ~ 1.8V
2.0
2.9
Notes : 1. Rise time specification based on 0pF + 50 Ω to V_SS, use these values to design to.
2. Fall time specification based on 0pF + 50 Ω to V_DD, use these values to design to.
3. Measured into 50pF only, use these values to characterize to.
4. All measurements done with respect to V_SS.
Max
Unit
Notes
4.37
Volts/ns
3
3.8
Volts/ns
3
5.6
Volts/ns
1,2
5.0
Volts/ns
1,2
12 of 15
Rev. 1.23 March 2009