K4S281633D-RL Datasheet, PDF (6/10 Pages) Samsung semiconductor – 8Mx16 SDRAM 54CSP

K4S281633D-RL(N)
Preliminary
CMOS SDRAM
DC CHARACTERISTICS
Recommended operating conditions (Voltage referenced to VSS = 0V, TA =-25°C ~ 70°C (Commercial), -25°C ~ 85 °C (Extended))
Parameter
Operating Current
(One Bank Active)
Symbol
Test Condition
ICC1
Burst length = 1
tRC ≥ tR C(min)
IO = 0 mA
Version
-75 -1H
-1L
Unit Note
80
75
75
mA
1
Precharge Standby Current
in power-down mode
ICC2P CKE ≤ VIL(max), tCC = 10ns
ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞
0.5
mA
0.5
Precharge Standby Current
IC C 2 N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
12
in non power-down mode
I C C 2NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
10
mA
Active Standby Current
in power-down mode
ICC3P CKE ≤ VIL(max), tCC = 10ns
ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞
7
mA
7
Active Standby Current
IC C 3 N
CKE ≥ VIH(min), CS ≥ VIH(min), tCC = 10ns
Input signals are changed one time during 20ns
23
mA
in non power-down mode
(One Bank Active)
I C C 3NS
CKE ≥ VIH(min), CLK ≤ VIL (max), tCC = ∞
Input signals are stable
20
mA
Operating Current
(Burst Mode)
Refresh Current
Self Refresh Current
ICC4
ICC5
IO = 0 mA
Page burst
4Banks Activated
tCCD = 2CLKs
tRC ≥ tR C(min)
ICC6 CKE ≤ 0.2V
130 130 110 mA
1
170 170 155 mA
2
-RL
uA
3
500
-RN
uA
4
Notes : 1. Measured with outputs open.
2. Refresh period is 64ms.
3. K4S281633D-RL**
4. K4S281633D-RN**
5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ)
Rev. 0.6 Nov. 2001