K4S281633D-RL Datasheet, PDF (2/10 Pages) Samsung semiconductor – 8Mx16 SDRAM 54CSP

K4S281633D-RL(N)
Preliminary
CMOS SDRAM
Revision History
Revision 0.0 (February 21. 2001, Target)
• First generation of 128Mb Low Power SDRAM without special function (VDD 3.0V, VDDQ 3.0V)
Revision 0.1 (June 4. 2001, Target)
• Addition of DC Current value.
Revision 0.2 (June 20. 2001, Target)
• Changed device name from low power sdram to mobile dram.
Revision 0.3 (August 1. 2001, Target)
• Change of tSAC from 6ns to 6.5ns in case of -1L part, from 7ns to 7.5ns in case of -15 part.
•Change of tOH from 3ns to 3.5ns.
•Change V IH min. from 2.0 V to 0.8xVDDQ and VOH min. from 2.4V to 0.9xVDDQ.
Revision 0.4 (October 6. 2001, Preliminary)
• Changed DC current.
• Changed of CL2 tSAC from 6ns to 7ns and CL3 tSAC from 6.5ns to 7ns for -75 part.
• Changed of CL2 tSAC from 6.5ns to 8ns and CL1 tSAC from 18ns to 20ns for -1L part.
•Changed of tOH from 3ns to 2.5ns.
• Changed of tSS from 2.5ns to 2.0ns for -75 part and from 3.0ns to 2.5ns for -1L part.
• Integration of VDDQ 1.8V device and 2.5V device.
• Changed VIH min. from 0.8xVDDQ to 0.9xVDDQ and VOH min. from 0.9xVDDQ to 0.95xVDDQ.
• Changed VIL max. from 0.8V to 0.3V and VOL min. from 0.4V to 0.2V.
• Changed IOH from -0.1mA to -2mA and IOL from 0.1mA to 2mA.
• Erased -15 bin and added -1H bin.
Revision 0.5 (October 12. 2001, Preliminary)
• Changed VIH min. from 0.9xVDDQ to 2.0V and VOH min. from 0.95xVDDQ to 2.4V.
• Changed VIL max. from 0.3V to 0.8V and VOL min. from 0.2V to 0.4V.
Revision 0.6 (November 7. 2001, Preliminary)
• Changed VIH min. from 2.0V to 2.2V and VIL max. from 0.8V to 0.5V.
Rev. 0.6 Nov. 2001