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K4T1G044QF Datasheet, PDF (39/46 Pages) Samsung semiconductor – 1Gb F-die DDR2 SDRAM
K4T1G044QF
K4T1G084QF
K4T1G164QF
datasheet
Rev. 1.11
DDR2 SDRAM
CK
CK
VDDQ
VIH(AC)min
tIS
tIH
VIH(DC)min
VREF(DC)
VIL(DC)max
dc to VREF
region
dc to VREF
region
nominal
slew rate
tIS tIH
nominal
slew rate
VIL(AC)max
VSS
Hold Slew Rate
Rising Signal =
VREF(DC) - VIL(DC)max
∆TR
∆TR
∆TF
Hold Slew Rate
Falling Signal
=
VIH(DC)min - VREF(DC)
∆TF
Figure 17. IIIustration of nominal slew rate for tIH
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