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| K4T1G044QF Datasheet, PDF (29/46 Pages) Samsung semiconductor – 1Gb F-die DDR2 SDRAM | |||
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K4T1G044QF
K4T1G084QF
K4T1G164QF
datasheet
Rev. 1.11
DDR2 SDRAM
DQS
DQS
VDDQ
tDS tDH
nominal
line
VIH(AC)min
VREF to ac
region
VIH(DC)min
tDS tDH
tangent
line
VREF(DC)
tangent
line
VIL(DC)max
VIL(AC)max
nominal
line
VSS
âTF
VREF to ac
region
âTR
SeRtiuspinSgleSwignRaalt=e
tangent
line[VIH(AC)min
âTR
-
VREF(DC)]
Setup Slew Rate
Falling Signal =
tangent line[VREF(DC) - VIL(AC)max]
âTF
Figure 9. IIIustration of tangent line for tDS (differential DQS, DQS)
- 29 -
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