English
Language : 

K4T1G044QF Datasheet, PDF (11/46 Pages) Samsung semiconductor – 1Gb F-die DDR2 SDRAM
K4T1G044QF
K4T1G084QF
K4T1G164QF
5. DDR2 SDRAM Addressing
datasheet
1Gb Addressing
Configuration
256Mb x4
128Mb x 8
# of Bank
8
8
Bank Address
BA0 ~ BA2
BA0 ~ BA2
Auto precharge
A10/AP
A10/AP
Row Address
A0 ~ A13
A0 ~ A13
Column Address
A0 ~ A9,A11
A0 ~ A9
* Reference information: The following tables are address mapping information for other densities.
256Mb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
64Mb x4
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9,A11
32Mb x 8
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
512Mb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
128Mb x4
4
BA0,BA1
A10/AP
A0 ~ A13
A0 ~ A9,A11
64Mb x 8
4
BA0,BA1
A10/AP
A0 ~ A13
A0 ~ A9
2Gb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
512Mb x4
8
BA0 ~ BA2
A10/AP
A0 ~ A14
A0 ~ A9,A11
256Mb x 8
8
BA0 ~ BA2
A10/AP
A0 ~ A14
A0 ~ A9
4Gb
Configuration
# of Bank
Bank Address
Auto precharge
Row Address
Column Address
1 Gb x4
8
BA0 ~ BA2
A10/AP
A0 - A15
A0 - A9,A11
512Mb x 8
8
BA0 ~ BA2
A10/AP
A0 - A15
A0 - A9
Rev. 1.11
DDR2 SDRAM
64Mb x16
8
BA0 ~ BA2
A10/AP
A0 ~ A12
A0 ~ A9
16Mb x16
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A8
32Mb x16
4
BA0,BA1
A10/AP
A0 ~ A12
A0 ~ A9
128Mb x16
8
BA0 ~ BA2
A10/AP
A0 ~ A13
A0 ~ A9
256Mb x16
8
BA0 ~ BA2
A10/AP
A0 - A14
A0 - A9
- 11 -