MC56U032DCCA Datasheet, PDF (25/64 Pages) Samsung semiconductor – Dual Voltage MultiMediaCard Specification

MultiMediaCard^TM
READ_BLK_MISALIGN
Defines if the data block to be read by one command can be spread over more than one physical block
of the memory device. The size of the data block is defined in READ_BLK_LEN. READ_BLK_MISALIGN
= 0 signals that crossing physical block boundaries is not allowed. READ_BLOCK_MISALIGN = 1
signals that crossing physical block boundaries is allowed. These MultiMediaCards do not support read
block operations with boundary crossing. The parameter READ_BLK_MISALIGN is permanently
assigned to the value “0”.
DSR_IMP
Defines if the configurable driver stage option is integrated on the card or not. If implemented a driver
stage register (DSR) must be implemented also.
DSR_IMP
0
1
DSR type
No DSR implemented
DSR implemented
The parameter DSR_IMP is permanently assigned to the value “0”.
C_SIZE
This parameter is used to compute the card capacity. The card capacity is computed from the entries
C_SIZE, C_SIZE_MULT and READ_BLK_LEN as follows:
Where
Memory Capacity = BLOCKNR*BLOCK_LEN
BLOCKNR = (C_SIZE+1)*MULT
MULT = 2^{C_SIZE_MULT+2} (C_SIZE_MULT < 8)
BLOCK_LEN = 2^READ_BLK_LEN, (READ_BLK_LEN < 12)
The following table shows the card capacity for each model.
C_SIZE
0x7A7
0xF4F
0xF4F
C_SIZE_MULT
3
3
4
READ_BLK_LEN
9
9
9
Card Capacity
32Mbytes
64Mbytes
128Mbytes
VDD_R_CURR_MIN, VDD_W_CURR_MIN
The maximum supply current at the minimum supply voltage VCC is coded as follows
:
VDD_R_CURR_MIN / VDD_W_CURR_MIN
2:0
Code for current consumption
2:0 0 = 0.5 mA; 1 = 1 mA; 2 = 5 mA;
3 = 10 mA; 4 = 25 mA; 5 = 35 mA;
6 = 60 mA; 7 = 100 mA
VDD_R_CURR_MAX, VDD_W_CURR_MAX
25