M378T3354BG Datasheet, PDF (19/23 Pages) Samsung semiconductor – DDR2 Unbuffered SDRAM MODULE

256MB,512MB,1GB Unbuffered DIMMs
Parameter
Symbol
Write recovery time
Auto precharge write
recovery + precharge time
Internal write to read
command delay
Internal read to precharge
command delay
Exit self refresh to a non-
read command
Exit self refresh to a read
command
Exit precharge power down
to any non-read command
Exit active power down to
read command
Exit active power down to
read command
(Slow exit, Lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
tWR
tDAL
tWTR
tRTP
tXSNR
tXSRD
tXP
tXARD
tXARDS
t_CKE
t_AOND
t_AON
ODT turn-on(Power-Down
mode)
ODT turn-off delay
ODT turn-off
t_AONPD
t_AOFD
t_AOF
ODT turn-off (Power-Down
mode)
t_AOFPD
ODT to power down entry
latency
ODT power down exit
latency
OCD drive mode output
delay
Minimum time clocks
remains ON after CKE
asynchronously drops LOW
tANPD
tAXPD
tOIT
tDelay
DDR2-533
min
max
15
x
tWR+tRP
x
DDR2-400
min
max
15
x
tWR+tRP
x
Units Notes
ns
tCK
7.5
x
10
x
ns
7.5
7.5
ns
tRFC + 10
tRFC + 10
ns
200
200
tCK
2
x
2
x
tCK
2
x
2
x
tCK
6 - AL
6 - AL
tCK
3
3
tCK
2
2
2
2
tCK
tAC(min) tAC(max) tAC(min) tAC(max)+
ns
+1
1
tAC(min)+ 2tCK+tAC tAC(min)+ 2tCK+tAC
ns
2
(max)+1
2
(max)+1
2.5
2.5
2.5
2.5
tCK
tAC(min)
tAC(max)+
tAC(min)
tAC(max)+
ns
0.6
0.6
tAC(min)+
2.5tCK+ tAC(min)+
2.5tCK+
ns
2
tAC(max)
2
tAC(max)+
+1
1
3
3
tCK
8
8
tCK
0
12
0
12
ns
tIS+tCK
tIS+tCK
ns
+tIH
+tIH
DDR2 SDRAM
Rev. 1.2 Jan. 2005