M378T3354BG Datasheet, PDF (15/23 Pages) Samsung semiconductor – DDR2 Unbuffered SDRAM MODULE

256MB,512MB,1GB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-2) (TA=0^oC, VDD= 1.9V)
M378T3354BG(Z)0 : 256MB(32Mx16 *4) Module
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
Normal
IDD7
D5
CC
(DDR2-533@CL=4) (DDR2-400@CL=3)
Unit
480
460
mA
580
500
mA
32
32
mA
100
100
mA
120
120
mA
120
120
mA
60
60
mA
280
260
mA
920
740
mA
820
680
mA
780
740
mA
22
22
mA
1,560
1,500
mA
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M391T6553BG(Z)0 : 512MB(64Mx8 *9) ECC Module
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
Normal
IDD7
D5
CC
(DDR2-533@CL=4) (DDR2-400@CL=3)
Unit
900
855
mA
990
900
mA
72
72
mA
225
225
mA
270
270
mA
270
270
mA
135
135
mA
630
585
mA
1,800
1,305
mA
1,620
1,305
mA
1,755
1,665
mA
50
50
mA
2,475
2,430
mA
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.2 Jan. 2005