M378T3354BG Datasheet, PDF (14/23 Pages) Samsung semiconductor – DDR2 Unbuffered SDRAM MODULE

256MB,512MB,1GB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-1) (TA=0^oC, VDD= 1.9V)
M378T6553BG(Z)0 : 512MB(64Mx8 *8) Module
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
Normal
IDD7
D5
CC
(DDR2-533@CL=4) (DDR2-400@CL=3)
Unit
800
760
mA
880
800
mA
64
64
mA
200
200
mA
240
240
mA
240
240
mA
120
120
mA
560
520
mA
1,600
1,160
mA
1,440
1,160
mA
1,560
1,480
mA
44
44
mA
2,200
2,160
mA
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M378T2953BG(Z)0 : 1GB(64Mx8 *16) Module
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
Normal
IDD7
D5
CC
(DDR2-533@CL=4) (DDR2-400@CL=3)
Unit
1,360
1,280
mA
1,440
1,320
mA
128
128
mA
400
400
mA
480
480
mA
480
480
mA
240
240
mA
1,120
1,040
mA
2,160
1,680
mA
2,000
1,680
mA
2,120
2,000
mA
88
88
mA
2,760
2
mA
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.2 Jan. 2005