M378T3354BG Datasheet, PDF (16/23 Pages) Samsung semiconductor – DDR2 Unbuffered SDRAM MODULE

256MB,512MB,1GB Unbuffered DIMMs
DDR2 SDRAM
Operating Current Table(1-3) (TA=0^oC, VDD= 1.9V)
M391T2953BG(Z)0 : 1GB(64Mx8 *18) ECC Module
Symbol
IDD0
IDD1
IDD2P
IDD2Q
IDD2N
IDD3P-F
IDD3P-S
IDD3N
IDD4W
IDD4R
IDD5B
IDD6
Normal
IDD7
D5
CC
(DDR2-533@CL=4) (DDR2-400@CL=3)
Unit
1,530
1,440
mA
1,620
1,485
mA
144
144
mA
450
450
mA
540
540
mA
540
540
mA
270
270
mA
1,260
1,170
mA
2,430
1,890
mA
2,250
1,890
mA
2,385
2,250
mA
99
99
mA
3,105
3,015
mA
Notes
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Input/Output Capacitance(VDD=1.8V, VDDQ=1.8V, TA=25^oC)
Parameter
Symbol
Min
Max
Non-ECC
M378T6553BG(Z)0
Input capacitance, CK and CK
CCK0
-
24
CCK1
-
25
CCK2
-
25
Input capacitance, CKE and CS
CI1
-
42
Input capacitance, Addr, RAS, CAS, WE
CI2
-
42
Input/output capacitance, DQ, DM, DQS, DQS
ECC
Input capacitance, CK and CK
Input capacitance, CKE and CS
Input capacitance, Addr, RAS, CAS, WE
Input/output capacitance, DQ, DM, DQS, DQS
CIO
CCK0
CCK1
CCK2
CI₁
CI₂
CIO
-
6
M391T6553BG(Z)0
-
25
-
25
25
-
44
-
44
-
6
Note: DM is internally loaded to match DQ and DQS identically.
Min
Max
M378T2953BG(Z)0
-
26
-
28
28
-
42
-
42
-
10
M391T2953BG(Z)0
-
28
-
28
28
-
44
-
44
-
10
Min
Max
M378T3354BG(Z)0
-
22
-
24
24
-
34
-
34
-
6
Units
pF
pF
Rev. 1.2 Jan. 2005