K4T1G044QC Datasheet, PDF (19/26 Pages) Samsung semiconductor – 1Gb C-die DDR2 SDRAM Specification

K4T1G044QC
K4T1G084QC
DDR2 SDRAM
Parameter
Exit active power down to read command
Exit active power down to read command
(slow exit, lower power)
CKE minimum pulse width
(high and low pulse width)
ODT turn-on delay
ODT turn-on
ODT turn-on(Power-Down mode)
ODT turn-off delay
ODT turn-off
Symbol
tXARD
tXARDS
t_CKE
t_AOND
t_AON
t_AONPD
t_AOFD
t_AOF
ODT turn-off (Power-Down mode)
t_AOFPD
ODT to power down entry latency
tANPD
ODT power down exit latency
tAXPD
OCD drive mode output delay
tOIT
Minimum time clocks remains ON after CKE asyn-
tDelay
chronously drops LOW
DDR2-800
min max
2
x
8 - AL
DDR2-667
min max
2
x
7 - AL
DDR2-533
min max
2
x
6 - AL
DDR2-400
min max
2
x
Units Notes
tCK
9
6 - AL
tCK 9, 10
3
3
3
3
tCK
36
2
2
2
2
2
2
2
2
tCK
tAC(max)
tAC(max)
tAC(max)
tAC(max)
tAC(min)
tAC(min)
tAC(min)
tAC(min)
ns
+0.7
+0.7
+1
+1
tAC(min)
+2
2tCK +
tAC(max)
+1
tAC(min)
+2
2tCK+tAC
(max)+1
tAC(min)
+2
2tCK+tAC
(max)+1
tAC(min)
+2
2tCK+tAC
(max)+1
ns
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
tCK
tAC(max)
tAC(max)
tAC(max)+
tAC(max)+
tAC(min)
tAC(min)
tAC(min)
tAC(min)
ns
+ 0.6
+ 0.6
0.6
0.6
2.5tCK+t
2.5tCK+t
2.5tCK+
2.5tCK+
tAC(min)
tAC(min)
tAC(min)
tAC(min)
AC(max)
AC(max)
tAC(max)
tAC(max) ns
+2
+2
+2
+2
+1
+1
+1
+1
3
3
3
3
tCK
8
8
8
8
tCK
0
12
0
12
0
12
0
12
ns
tIS+tCK
tIS+tCK
tIS+tCK
tIS+tCK
ns
+tIH
+tIH
+tIH
+tIH
13, 25
26
24
19 of 26
Rev. 1.1 June 2007