M368L6523CUS Datasheet, PDF (15/25 Pages) Samsung semiconductor – DDR SDRAM Unbuffered Module

256MB, 512MB, 1GB Unbuffered DIMM
DDR SDRAM
AC Timming Parameters & Specifications
Parameter
Row cycle time
Refresh row cycle time
Row active time
RAS to CAS delay
Row precharge time
Row active to Row active delay
Write recovery time
Last data in to Read command
Clock cycle time
Clock high level width
Clock low level width
DQS-out access time from CK/CK
Output data access time from CK/CK
Data strobe edge to ouput data edge
Read Preamble
Read Postamble
CK to valid DQS-in
DQS-in setup time
DQS-in hold time
DQS falling edge to CK rising-setup time
DQS falling edge from CK rising-hold time
DQS-in high level width
DQS-in low level width
Address and Control Input setup time(fast)
Address and Control Input hold time(fast)
Address and Control Input setup time(slow)
Address and Control Input hold time(slow)
Data-out high impedence time from CK/CK
Data-out low impedence time from CK/CK
Mode register set cycle time
DQ & DM setup time to DQS
DQ & DM hold time to DQS
Control & Address input pulse width
DQ & DM input pulse width
Exit self refresh to non-Read command
Exit self refresh to read command
Refresh interval time
Output DQS valid window
Clock half period
Data hold skew factor
DQS write postamble time
Active to Read with Auto precharge
command
Autoprecharge write recovery +
Precharge time
CL=2.0
CL=2.5
CL=3.0
Symbol
tRC
tRFC
tRAS
tRCD
tRP
tRRD
tWR
tWTR
tCK
tCH
tCL
tDQSCK
tAC
tDQSQ
tRPRE
tRPST
tDQSS
tWPRES
tWPRE
tDSS
tDSH
tDQSH
tDQSL
tIS
tIH
tIS
tIH
tHZ
tLZ
tMRD
tDS
tDH
tIPW
tDIPW
tXSNR
tXSRD
tREFI
tQH
tHP
tQHS
tWPST
tRAP
tDAL
CC
(DDR400@CL=3.0)
Min
55
70
40
15
15
10
15
2
-
6
5
0.45
0.45
-0.55
-0.65
-
0.9
0.4
0.72
0
0.25
0.2
0.2
0.35
0.35
0.6
0.6
0.7
0.7
-
-0.65
10
0.4
Max
70K
-
12
10
0.55
0.55
+0.55
+0.65
0.4
1.1
0.6
1.25
+0.65
+0.65
0.4
2.2
1.75
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.5
0.4
0.6
15
(tWR/tCK)
+
(tRP/tCK)
B3
(DDR333@CL=2.5)
Min
Max
60
72
42
70K
18
18
12
15
1
7.5
12
6
12
-
-
0.45
0.55
0.45
0.55
-0.6
+0.6
-0.7
+0.7
-
0.45
0.9
1.1
0.4
0.6
0.75
1.25
0
0.25
0.2
0.2
0.35
0.35
0.75
0.75
0.8
0.8
-
+0.7
-0.7
+0.7
12
0.45
0.45
2.2
1.75
75
200
7.8
tHP
-tQHS
-
tCLmin
or tCHmin
-
0.55
0.4
0.6
18
(tWR/tCK)
+
(tRP/tCK)
Unit
Note
ns
ns
ns
ns
ns
ns
ns
tCK
ns
ns
tCK
tCK
ns
ns
ns
22
tCK
tCK
tCK
ns
13
tCK
tCK
tCK
tCK
tCK
ns
15, 17~19
ns
15, 17~19
ns
16~19
ns
16~19
ns
11
ns
11
ns
ns
j, k
ns
j, k
ns
18
ns
18
ns
tCK
us
14
ns
21
ns
20, 21
ns
21
tCK
12
tCK
23
Rev. 1.0 February. 2005