M368L6523CUS Datasheet, PDF (12/25 Pages) Samsung semiconductor – DDR SDRAM Unbuffered Module

256MB, 512MB, 1GB Unbuffered DIMM
DDR SDRAM IDD spec table
DDR SDRAM
M368L6523CUS [ (64M x 8) * 8, 512MB Non ECC Module ]
(V_DD=2.7V, T = 10°C)
Symbol
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
Unit
Notes
IDD0
960
840
mA
IDD1
1,200
1,080
mA
IDD2P
40
40
mA
IDD2F
240
240
mA
IDD2Q
200
200
mA
IDD3P
360
240
mA
IDD3N
480
360
320
IDD4R
1,240
1,120
mA
IDD4W
1,400
1,200
mA
IDD5
1,760
1,640
mA
IDD6
Normal
40
40
mA
Low power
24
24
mA
Optional
IDD7A
3,080
2,880
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M381L6523CUM [ (64M x 8) * 9, 512MB ECC Module ]
(V_DD=2.7V, T = 10°C)
Symbol
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
Unit
Notes
IDD0
1,080
950
mA
IDD1
1,350
1,220
mA
IDD2P
45
45
mA
IDD2F
270
270
mA
IDD2Q
230
230
mA
IDD3P
410
270
mA
IDD3N
540
410
mA
IDD4R
1,400
1,260
mA
IDD4W
1,580
1,350
mA
IDD5
1,980
1,850
mA
IDD6
Normal
45
45
mA
Low power
27
27
mA
Optional
IDD7A
3,470
3,240
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.0 February. 2005