M368L6523CUS Datasheet, PDF (13/25 Pages) Samsung semiconductor – DDR SDRAM Unbuffered Module

256MB, 512MB, 1GB Unbuffered DIMM
DDR SDRAM IDD spec table
DDR SDRAM
M368L2923CUN [ (64M x 8) * 16, 1GB Non ECC Module ]
(V_DD=2.7V, T = 10°C)
Symbol
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
Unit
Notes
IDD0
1,440
1,200
mA
IDD1
1,680
1,440
mA
IDD2P
80
80
mA
IDD2F
480
480
mA
IDD2Q
400
400
mA
IDD3P
720
480
mA
IDD3N
960
720
mA
IDD4R
1,720
1,480
mA
IDD4W
1,880
1,560
mA
IDD5
2,240
2,000
mA
IDD6
Normal
80
80
mA
Low power
48
48
mA
Optional
IDD7A
3,560
3,240
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
M381L2923CUM [ (64M x 8) * 18, 1GB ECC Module ]
(V_DD=2.7V, T = 10°C)
Symbol
CC(DDR400@CL=3)
B3(DDR333@CL=2.5)
Unit
Notes
IDD0
1,620
1,350
mA
IDD1
1,890
1,620
mA
IDD2P
90
90
mA
IDD2F
540
540
mA
IDD2Q
450
450
mA
IDD3P
810
540
mA
IDD3N
1,080
810
mA
IDD4R
1,940
1,670
mA
IDD4W
2,120
1,760
mA
IDD5
2,520
2,250
mA
IDD6
Normal
90
90
mA
Low power
54
54
mA
Optional
IDD7A
4,010
3,650
mA
* Module IDD was calculated on the basis of component IDD and can be differently measured according to DQ loading cap.
Rev. 1.0 February. 2005