S8S3122X16 Datasheet, PDF (12/44 Pages) Samsung semiconductor – 256K x 16 SDRAM

S8S3122X16
CMOS SDRAM
BURST SEQUENCE (BURST LENGTH = 4)
Initial Address
A1
A0
Sequential
Interleave
0
0
0
1
2
3
0
1
2
3
0
1
1
2
3
0
1
0
3
2
1
0
2
3
0
1
2
3
0
1
1
1
3
0
1
2
3
2
1
0
BURST SEQUENCE (BURST LENGTH = 8)
Initial Address
A2
A1
A0
Sequential
Interleave
0
0
0
0
123
4
5
6
70
123
4
5
6
7
0
0
1
1
234
5
6
7
01
032
5
4
7
6
0
1
0
2
345
6
7
0
12
301
6
7
4
5
0
1
1
3
456
7
0
1
23
210
7
6
5
4
1
0
0
4
567
0
1
2
34
567
0
1
2
3
1
0
1
5
670
1
2
3
45
476
1
0
3
2
1
1
0
6
701
2
3
4
56
745
2
3
0
1
1
1
1
7
012
3
4
5
67
654
3
2
1
0
Ver 0.0 Sep. '01