HAT2070R Datasheet, PDF (9/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2070R
Reverse Drain Current vs.
Souece to Drain Voltage
50
40
10 V
5V
V_GS = 0
30
20
10
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V _SD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
0.1
0.01
0.001
D=1
0.5
0.2
0.1
0.05
0.02
0.01
1shot ^pulse
0.0001
10
100
1m
θ _{ch - f(t) =} γ _{s (t) •} θ _{ch - f}
θ _{ch - f = 83.3 °C/W, Ta = 25 °C}
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
T
D=
PW
T
10 m 100 m 1
10
Pulse Width PW (s)
100 1000 10000