HAT2070R Datasheet, PDF (3/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2070R
Silicon N Channel Power MOS FET
Power Switching
Features
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 11 mΩ typ (at V_GS = 10V)
Outline
SOP-8
8 ^{7 65}
56 7 8
DD D D
1 ²³⁴
4
G
SSS
12 3
1, 2, 3 Source
4
Gate
5, 6, 7, 8 Drain
ADE-208-1226B (Z)
3rd. Edition
Jan. 2001