HAT2070R Datasheet, PDF (8/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2070R
Body—Drain Diode Reverse
Recovery Time
100
50
20
di/dt = 50 A/µs
V_GS = 0, Ta = 25°C
10
0.1 0.2 0.5 1 2 5 10 20
Reverse Drain Current I _DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30
VGS = 0
f = 1 MHz
10
0
10
20 30 40
50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
20
I _D = 12 A
V_GS
40
16
30 _VDS
20
12
V _DD = 25 V
10 V
8
5V
10
V _DD = 25 V
4
10 V
5V
0
0
8
16 24
32 40
Gate Charge Qg (nc)
Switching Characteristics
200
100
t _d(off)
50
tf
tr
20
t _d(on)
10
5
V_GS = 10 V , V_DS = 10 V
2 ^{Rg = 4.7 Ω, duty < 1 %}
0.1 0.2 0.5 1 2 5 10 20
Drain Current I _D (A)