HAT2070R Datasheet, PDF (4/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2070R
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
V_DSS
V_GSS
I_D
I ^Note1
D(pulse)
I _DR
Pch ^Note2
30
± 20
12
96
12
2.5
Channel to Ambient Thermal
θch-a ^Note2
50
Impedance
Channel temperature
Tch
150
Storage temperature
Tstg
– 55 to + 150
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
Unit
V
V
A
A
A
W
°C/W
°C
°C