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HAT2070R Datasheet, PDF (5/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching
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Electrical Characteristics (Ta = 25°C)
Item
Symbol
Drain to source breakdown voltage V(BR)DSS
Gate to source breakdown voltage V(BR)GSS
Gate to source leak current
I GSS
Zero gate voltege drain current
I DSS
Gate to source cutoff voltage
VGS(off)
Static drain to source on state
RDS(on)
resistance
RDS(on)
Forward transfer admittance
|yfs|
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Total gate charge
Qg
Gate to source charge
Qgs
Gate to drain charge
Qgd
Turn-on delay time
t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
Body–drain diode forward voltage VDF
Body–drain diode reverse recovery trr
time
Note: 3. Pulse test
Min
30
± 20
—
—
1.0
—
—
12
—
—
—
—
—
—
—
—
—
—
—
—
Typ
Max
—
—
—
—
—
± 10
—
1
—
2.5
11
14
15
22
20
—
1400 —
340
—
190
—
23
—
4
—
4
—
15
—
18
—
50
—
9
—
0.85 1.10
50
—
Unit
V
V
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nc
nc
nc
ns
ns
ns
ns
V
ns
HAT2070R
Test Conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
VDS = 30 V, VGS = 0
VDS = 10 V, I D = 1 mA
ID = 6 A, VGS = 10 V Note3
ID = 6 A,VGS = 4.5 V Note3
ID = 6 A, VDS=10 V Note3
VDS = 10 V
VGS = 0
f = 1 MHz
VDD = 10 V
VGS = 10 V
ID = 12 A
VGS = 10 V, ID = 6 A
VDD ≅ 10 V
RL = 1.67 Ω
Rg = 4.7 Ω
IF = 12 A, VGS = 0 Note3
IF = 12 A, VGS = 0
diF/ dt = 50 A/ µs
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