HAT2070R Datasheet, PDF (6/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2070R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition :
When using the glass epoxy board
(FR4 40x40x1.6 mm), PW < 10 s
3.0
2.0
1.0
0
50
100
150
200
Ambient Temperature Ta (°C)
Maximum Safe Operation Area
500
100
10 µs
10
1
DC _Ope^P_raWtion=
Operation in
this area is
1
100
ms
µ_s
(¹_P⁰_W^m_<^s_{1N0otse) 4}
0.1 ^{limited by R DS(on)}
Ta = 25 °C
0.01 ^{1 shot Pulse}
0.1 0.3 1 3 10 30 100
Drain to Source Voltage V DS (V)
Note 4 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)
Typical Output Characteristics
50
10V
4.5 V
4V
40
Pulse Test
30
3.5 V
20
V_GS = 3 V
10
0
2
4
6
8
10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
50
V _DS = 10 V
Pulse Test
40
30
20
Tc = 75°C
25°C
-25C
10
0
1
2
3
4
5
Gate to Source Voltage V GS (V)