HAT2070R Datasheet, PDF (7/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.20
Pulse Test
0.16
0.12
I D = 10 A
0.08
5A
0.04
2A
0
4
8
12 16 20
Gate to Source Voltage V _GS (V)
HAT2070R
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
V_GS = 4.5 V
10
10 V
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
30
I D = 2 A, 5 A
10 A
20 _{V GS = 4.5 V}
10
2 A, 5 A, 10 A
10 V
0
-40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
100
30
Tc = -25 °C
10
75 °C
3
25 °C
1
0.3
0.1
0.1
V _DS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current I _D (A)