HAT1072H Datasheet, PDF (9/12 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

Reverse Drain Current vs.
Souece to Drain Voltage
-50
-40
-10 V
-5 V
-30
V_GS = 0
-20
-10
Pulse Test
0
-0.4 -0.8 -1.2 -1.6 -2.0
Source to Drain Voltage V _SD (V)
HAT1072H
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.01
0.02
0.01
1shot
pulse
10 µ
100 µ
θ_{ch - c(t) =} γ_{s (t) ·} θ _{ch - c}
θ _{ch - c = 4.17°C/ W, Tc = 25°C}
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Rev.5, May 2002, page 7 of 10