HAT1072H Datasheet, PDF (8/12 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1072H
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = -100 A / µs
V_GS = 0, Ta = 25°C
10
-0.1 -0.3 -1 -3 -10 -30 -100
Reverse Drain Current I _DR (A)
30000
10000
Typical Capacitance vs.
Drain to Source Voltage
Ciss
3000
1000
Coss
300
Crss
100
30
0
VGS = 0
f = 1 MHz
-10 -20 -30 -40 -50
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
0
0
V_DD = -5 V
-10 V
-10
-25 V
-4
-20
-8
-30 ^VDS
V_DD = -25 V
-10 V
-12
-5 V
-40
I _D = -40 A
V_GS
-500
80 160 240 320
Gate Charge Qg (nc)
-16
-20
400
Switching Characteristics
500
200
100
tf
t _d(off)
50
tr
20
t _d(on)
10
V_GS = -10 V, V_DS= -10 V
Rg = 4.7 Ω, duty < 1 %
5
-0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50
Drain Current I _D (A)
Rev.5, May 2002, page 6 of 10