HAT1072H Datasheet, PDF (4/12 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1072H
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Channel dissipation
V
DSS
V
GSS
I_D
I ^Note1
D(pulse)
I
DR
Pch ^Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Tc=25°C
Ratings
Unit
-30
V
-20/+10
V
-40
A
-160
A
-40
A
30
W
150
°C
– 55 to + 150
°C
Rev.5, May 2002, page 2 of 10