HAT1072H Datasheet, PDF (6/12 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1072H
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
-500
-100
-10
100
DC^P_O^W_pe=_ra1ti0o¹_nm^m_s^s
10
µ_s
µ_s
-1 _{Operation in}
this area is
limited by R DS(on)
-0.1
Tc = 25°C
-0.01 ^{1 shot Pulse}
-0.1 -0.3 -1 -3 -10 -30 -100
Drain to Source Voltage V DS (V)
Typical Output Characteristics
-50
-3.5 V
Pulse Test
-40
-10 V
4.5 V
-2.8 V
-30
-20
-2.6 V
-10
V_GS = -2.2 V
0
-2
-4
-6
-8 -10
Drain to Source Voltage V _DS (V)
Typical Transfer Characteristics
-50
V _DS = -10 V
Pulse Test
-40
-30
-20
Tc = 75°C
-10
25°C
-25°C
0
-1
-2 -3
-4
-5
Gate to Source Voltage V GS (V)
Rev.5, May 2002, page 4 of 10