HAT1072H Datasheet, PDF (7/12 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

Drain to Source Saturation Voltage vs.
Gate to Source Voltage
-0.20
Pulse Test
-0.16
-0.12
-0.08
I D = -20 A
-0.04
-10 A
-5 A
0
-4 -8 -12 -16 -20
Gate to Source Voltage V _GS (V)
HAT1072H
Static Drain to Source on State Resistance
vs. Drain Current
100
Pulse Test
50
20
10
V_GS = -4.5 V
5
-10 V
2
1
-0.1-0.2 -0.5 -1 -2 -5 -10 -20 -50 -100
Drain Current I _D (A)
Static Drain to Source on State Resistance
vs. Temperature
20
Pulse Test
16
12
I D = -5 A, -10 A, -20 A
8
V _GS = -4.5 V
4
-5 A, -10 A, -20 A
-10 V
0
-40
0
40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
200
100
Tc = -25°C
30
10
25°C
3
75°C
1
0.2
-0.1
V _DS = -10 V
Pulse Test
-0.3 -1 -3 -10 -30 -100
Drain Current I _D (A)
Rev.5, May 2002, page 5 of 10