HAT1072H Datasheet, PDF (5/12 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1072H
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown
voltage
Gate to source leak current
Zero gate voltege drain current
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward
voltage
Body–drain diode reverse
recovery time
Notes: 3. Pulse test
Symbol Min
V
(BR)DSS
-30
I_GSS
I_DSS
V
GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t
d(on)
t
r
t
d(off)
t_f
V_DF
—
—
-0.5
—
—
36
—
—
—
—
—
—
—
—
—
—
—
t_rr
—
Typ Max Unit Test Conditions
—
—
V
I = -10 mA, V = 0
D
GS
—
± 0.1 µA
—
-1
µA
—
-2.0 V
3.6 4.5 mΩ
5.3 7.7 mΩ
60
—
S
9500 —
pF
1300 —
pF
700 —
pF
155 —
nc
28
—
nc
26
—
nc
28
—
ns
60
—
ns
305 —
ns
140 —
ns
0.87 1.14 V
V_GS = -20,+10 V, V_DS = 0
V_DS = -30 V, V_GS = 0
V = -10 V, I = -1 mA
DS
D
I_D = -20 A, V_GS = -10 V ^Note3
I_D = -20 A, V_GS = -4.5 V ^Note3
I_D = -20 A, V_DS = -10 V ^Note3
V_DS = -10 V
V =0
GS
f = 1 MHz
V_DD = -10 V
V_GS = -10 V
I_D = -40 A
V = -10 V, I = -20 A
GS
D
V
DD
≅
-10
V
R
L
=
0.5
Ω
Rg = 4.7 Ω
IF = -40 A, V_GS = 0 ^Note3
110 —
ns
IF = -40 A, V_GS = 0
diF/ dt = 100 A/ µs
Rev.5, May 2002, page 3 of 10