HAT1072H Datasheet, PDF (3/12 Pages) Renesas Technology Corp – Silicon P Channel Power MOS FET Power Switching

HAT1072H
Silicon P Channel Power MOS FET
Power Switching
Features
• Capable of -4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on)
=
3.6
mΩ
typ
(at
V
GS
=
-10
V)
Outline
LFPAK
5
D
4
G
SSS
12 3
ADE-208-1534E (Z)
6th. Edition
May 2002
5
1 ²³⁴
1, 2, 3 Source
4
Gate
5
Drain