HAF1004_15 Datasheet, PDF (9/12 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1004(L), HAF1004(S)
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
–20
–16
–12
V DD= –16 V
–8
–24V
–4
0
0.0001 0.001
0.01
0.1
Shutdown Time of Lord-Short Test
Pw (S)
Shutdown Case Temperature vs.
Gate to Source Voltage
200
180
160
140
120
I _D = –0.5 A
100
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
1
D=1
Tc = 25˚C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.02
0.011shot
pulse
0.01
10 m
100 m
θch – c(t) = γ s (t) • θch – c
θch – c = 6.25˚C/W, Tc = 25˚C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (S)
Rev.5.00, Apr.29.2003, page 7 of 10