HAF1004_15 Datasheet, PDF (4/12 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1004(L), HAF1004(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Cannel dissipation
Cannel temperature
Storage temperature
Notes: 1. PW ≤ 0µs, duty cycle ≤ 1%
2. Value at Ta = 25°C
Symbol
V_DSS
V_GSS
V_GSS
I_D
I_{D (pulse)} ^Note1
I_DR
Pch ^Note2
Tch
Tstg
Ratings
Unit
–60
V
–16
V
2.5
V
–5
A
–10
A
–5
A
20
W
150
°C
–55 to +150
°C
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
V_IH
V_IL
I_IH1
I_IH2
I_IL
I_IH(sd)1
I_IH(sd)2
Tsd
Vop
Min
–3.5
—
—
—
—
—
—
—
–3.5
Typ
Max
Unit
—
—
V
—
–1.2
V
—
–100
µA
—
–50
µA
—
–1
µA
–0.8
—
mA
–0.35 —
mA
175
—
°C
—
–12
V
Test Conditions
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Vi = –1.2 V, V_DS = 0
Vi = –8 V, V_DS = 0
Vi = –3.5 V, V_DS = 0
Cannel temperature
Rev.5.00, Apr.29.2003, page 2 of 10