HAF1004_15 Datasheet, PDF (3/12 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1004(L), HAF1004(S)
Silicon P Channel MOS FET Series Power Switching
REJ03G0028-0500Z
(Previous ADE-208-629B (Z))
Rev.5.00
2003.04.29
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has
the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the
gate voltage in case of high junction temperature like applying over power consumption, over current etc..
Features
• Logic level operation to (–4 to –6 V Gate drive)
• High endurance capability against to the shut-down circuit
• Built-in the over temperature shut-down circuit
• Latch type shut down operation (need 0 voltage recovery)
Outline
D
DPAK-2 DPAK-S
G
Gate resistor
Tempe-
rature
Senching
Circuit
Latch
Circuit
Gate
Shut-
down
Circuit
S
123
12 ₃
1. Gate
2. Drain
(Flange)
3. Source
Rev.5.00, Apr.29.2003, page 1 of 10