HAF1004_15 Datasheet, PDF (7/12 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1004(L), HAF1004(S)
Drain to Saturation Voltage vs.
Gate to Source Voltage
–2.0
Pulse Test
–1.6
–1.2
–0.8
I _D = –5 A
–0.4
–2.5 A
–1 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Static Drain to Source State Resistance
vs. Drain Current
1000
Pulse Test
500
V_GS = –4 V
200
100 ^{–10 V}
50
20
10
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I_D (A)
Drain to Source On State Resistance
vs. Temperature
500
Pulse Test
400
300
V_GS = –4 V
200
100
V_GS = –10 V
I _D = –5 A
-2.5 A
–1 A
–5 A
–2.5 A
–1 A
0
–25 0
25 50 75 100 125
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
10
V _DS = –10 V _{Tc = –25°C}
5 _{Pulse Test}
2
1
25°C
0.5
75°C
0.2
0.1
0.05
0.02
0.01
–0.01
–0.1
–1
–10
Drain Current I_D (A)
Rev.5.00, Apr.29.2003, page 5 of 10