HAF1004_15 Datasheet, PDF (5/12 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1004(L), HAF1004(S)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min Typ Max Unit
Drain current
I_D1
Drain current
I_D2
Drain to source breakdown voltage V_(BR)DSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source breakdown voltage V_(BR)GSS
Gate to source leak current
I_GSS1
I_GSS2
I_GSS3
I_GSS4
Input current (shut down)
I_GS(OP)1
I_GS(OP)2
Zero gate voltage drain current I_DSS
Gate to source cut off voltage
V_GS(off)
Forward transfer admittance
|y_fs|
Static drain to source on state
resistance
R_DS(on)
4
—
–60
–16
2.5
—
—
—
—
—
—
—
–1.1
2
—
——A
— –10 mA
——V
——V
——V
— –100 µA
— –50 µA
— –1 µA
— 100 µA
–0.8 — mA
–0.35 — mA
— –10 µA
— –2.25 V
4
—S
140 200 mΩ
Static drain to source on state
resistance
R_DS(on)
—
200 340 mΩ
Output capacitance
Coss — 326 ― pF
Turn-on delay time
t_d(on)
Rise time
t_r
Turn off delay time
t_d(off)
Fall time
t_f
Body-drain diode forward voltage V_DF
Body-drain diode reverse recovery t_rr
time
—2
― µs
— 7.6 — µs
— 3.2 ― µs
— 3.2 — µs
— –0.9 — V
— 77 — ns
Over lord shut down
operation time ^note4
t_os1
— 8.4 — ms
t_os2
— 2.4 — ms
Notes: 3. Pulse test
4. Including the junction temperature rise of the lorded condition
Test Conditions
V_GS = –3.5 V, V_DS = –2 V
V_GS = –1.2 V, V_DS = –2 V
I_D = –10 mA, V_GS =0
I_G = –800 µA, V_DS =0
I_G = 100 µA, V_DS =0
V_GS = –8 V, V_DS =0
V_GS = –3.5 V, V_DS =0
V_GS = –1.2 V, V_DS =0
V_GS = 2.4 V, V_DS =0
V_GS = –8 V, V_DS =0
V_GS = –3.5 V, V_DS =0
V_DS = –60 V, V_GS = 0
V_DS = –10 V, I_D = –1 mA
I_D =–2.5 A, V_DS =–10 V ^Note3
I_D = –2.5 A, V_GS = –10 V ^Note3
I_D = –2.5 A, V_GS = –4 V ^Note3
V_DS = –10 V, V_GS =0, f = 1 MHz
V_GS = –5 V, I_D= –2.5 A,
R_L = 12 Ω
I_F = –5A, V_GS = 0
I_F = –5 A, V_GS = 0
diF/dt = 50 A/µs
V_GS = –5 V, V_DD = –16 V
V_GS = –5 V, V_DD = –24 V
Rev.5.00, Apr.29.2003, page 3 of 10