HAF1004_15 Datasheet, PDF (8/12 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1004(L), HAF1004(S)
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / µs
V_GS = 0, Ta = 25°C
10
–0.1 –0.2 –0.5 –1 –2
–5 –10
Reverse Drain Current I_DR (A)
Switching Characteristics
100
50
20
10 ^{t d(off)}
tr
5
tf
2
t _d(on)
1
0.5
0.2
0.1
–0.1 –0.2
V_GS = –10 V, V_DD = –30 V
PW = 300 µs, duty < 1 %
–0.5 –1 –2
–5 –10
Drain Current I_D (A)
Reverse Drain Current vs.
Source to Drain Voltage
–5
Pulse Test
–4
-10 V
10000
Typical capacitance vs.
Drain to Source Voltage
VGS = 0
f = 1 MHz
–3
–2
-5 V
V_GS = 0 V
–1
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
1000
Coss
100
0
–10 –20 –30 –40 –50 –60
Drain to Source V_DS (V)
Rev.5.00, Apr.29.2003, page 6 of 10