HAF1004_15 Datasheet, PDF (6/12 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1004(L), HAF1004(S)
Main Characteristics
Power vs. Temperature Derating
40
30
20
10
0
50
100
150
200
Case Temperature Tc (°C)
Maximum Safe Operation Area
–100
–50 ^{Thermal shut down}
Operation area
–20
–10
100 _µs
–5
–2
–1
–0.5
DC
Operation
Operation in this area
is limited by R_DS(on)
Ta = 25°C
(Tc
=
25_°C)
–0.3
–0.5 –1 –2 –5 –10 –20 –50 –100
Drain Source Voltage V_DS (V)
Typical Output Characteristics
–10
–10 V
–6 V
–8 V
–8
–4 V
–6
V_GS = –3.5 V
–4
–2
Pulse Test
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Typical Transfer Characteristics
–5 _{V DS = –10 V –25°C}
Pulse Test
25°C
Tc = 75°C
–4
–3
–2
Tc = 75°C
–1
25°C
–25°C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Rev.5.00, Apr.29.2003, page 4 of 10