HAT2210R Datasheet, PDF (8/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

HAT2210R, HAT2210RJ
Static Drain to Source on State Resistance
vs. Temperature
50
Pulse Test
40
30
V_GS = 4.5 V
20
10 ^{10 V}
5A
I_D = 1 A, 2 A
1 A, 2 A, 5 A
0
-25 0 25 50 75 100 125 150
Case Temperature Tc (°C)
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
5
2
di / dt = 100 A / µs
1
V_GS = 0, Ta = 25°C
0.1 0.3 1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
50
10
I_D = 8 A
40
30 _VDS
V_DD = 25 V
10 V
5V
8
V_GS ⁶
20
4
10
V_DD = 25 V
2
10 V
5V
0
0
4
8
12 16 20
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current
100
50
Tc = –25°C
20
10
5
25°C
2
1
75°C
0.5
0.2
0.1
0.1 0.2 0.5 1 2
V_DS = 10 V
Pulse Test
5 10 20 50 100
Drain Current I_D (A)
Typical Capacitance vs.
Drain to Source Voltage
10000
5000
V_GS = 0
f = 1 MHz
2000
Ciss
1000
500
200
Coss
100
Crss
50
20
10
0 5 10 15 20 25 30
Drain to Source Voltage V_DS (V)
Switching Characteristics
100
50
td(off)
tr
20
10
td(on)
5
tf
2 _{VGS = 10 V, VDD = 10 V}
Rg =4.7 Ω, duty ≤ 1 %
1
0.1 0.2 0.5 1 2 5 10 20
Drain Current I_D (A)
50 100
Rev.3.00, Mar.15.2005, page 8 of 11