HAT2210R Datasheet, PDF (6/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

HAT2210R, HAT2210RJ
Reverse Drain Current vs.
Source to Drain Voltage
20
10 V
5V
10
V_GS = 0 V, –5 V
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
10
IAP = 7.5 A
8
VDD = 15 V
duty < 0.1 %
Rg > 50 Ω
6
4
2
0
25 50 75 100 125 150
Channel Temperature Tch (°C)
Normalized Transient Thermal Impedance vs. Pulse Width
10
D=1
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01 _{1shot pulse}
θch - f(t) = γs (t) x θch - f
θch - f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40x40x1.6 mm)
PDM
PW
D=
PW
T
T
0.001
10 µ 100 µ 1 m 10 m 100 m 1
10
100 1000 10000
Pulse Width PW (S)
Rev.3.00, Mar.15.2005, page 6 of 11