HAT2210R Datasheet, PDF (1/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

HAT2210R, HAT2210RJ
Silicon N Channel Power MOS FET with Schottky Barrier Diode
High Speed Power Switching
REJ03G0578-0300
Rev.3.00
Mar.15.2005
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
• Built-in Schottky Barrier Diode
Outline
RENESAS Package code: PRSP0008DD-A
(Package name: SOP-8<FP-8DA>)
78
DD
56
DD
2
4
G
G
8 ^{7 65}
1 ²³⁴
S
1
MOS1
S
3
MOS2 and
Schottky Barrier Diode
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Ratings
Item
Symbol
HAT2210R
HAT2210RJ
MOS1 MOS2 & SBD MOS1 MOS2 & SBD
Drain to source voltage
V_DSS
30
30
30
30
Gate to source voltage
V_GSS
±20
±12
±20
±12
Drain current
I_D
7.5
8.0
7.5
8.0
Drain peak current
I_{D(pulse)Note1}
60
64
60
64
Reverse drain current
I_DR
7.5
Avalanche current
I_AP ^{Note 2}
—
Avalanche energy
E_AR ^{Note 2}
—
Channel dissipation
Pch ^Note3
1.5
8.0
7.5
8.0
—
7.5
8.0
—
5.62
6.4
1.5
1.5
1.5
Channel temperature
Tch
150
150
150
150
Storage temperature
Tstg
–55 to +150 –55 to +150 –55 to +150 –55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 %
2. Value at Tch = 25°C, Rg ≥ 50 Ω
3. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10 s
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
°C
°C
Rev.3.00, Mar.15.2005, page 1 of 11