HAT2210R Datasheet, PDF (2/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

HAT2210R, HAT2210RJ
Electrical Characteristics
• MOS1
Item
Drain to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Zero gate voltage
drain current
HAT2210R
HAT2210RJ
Gate to source cutoff voltage
Static drain to source on state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to source charge
Gate to drain charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body–drain diode forward voltage
Body–drain diode reverse
recovery time
Notes: 4. Pulse test
Symbol
V_(BR)DSS
I_GSS
I_DSS
I_DSS
I_DSS
V_GS(off)
R_DS(on)
R_DS(on)
|y_fs|
Ciss
Coss
Crss
Qg
Qgs
Qgd
t_d(on)
t_r
t_d(off)
t_f
V_DF
t_rr
Min
30
—
—
—
—
1.0
—
—
9
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
19
27
15
630
155
57
4.6
2.2
1.2
7
14
36
3.4
0.85
17
Max
—
±0.1
1
—
10
2.5
24
40
—
—
—
—
—
—
—
—
—
—
—
1.11
—
Unit
V
µA
µA
µA
µA
V
mΩ
mΩ
S
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
ns
(Ta = 25°C)
Test Conditions
I_D = 10 mA, V_GS = 0
V_GS = ±20 V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 24 V, V_GS = 0,
Ta = 125°C
V_DS = 10 V, I_D = 1 mA
I_D = 3.75 A, V_GS = 10 V ^Note4
I_D = 3.75 A, V_GS = 4.5 V ^Note4
I_D = 3.75 A, V_DS = 10 V ^Note4
V_DS = 10 V, V_GS = 0,
f = 1MHz
V_DD = 10 V, V_GS = 4.5 V,
I_D = 7.5 A
V_GS =10 V, I_D = 3.75 A,
V_DD ≈ 10 V, R_L = 2.66 Ω,
R_g = 4.7 Ω
IF = 7.5 A, V_GS = 0 ^Note4
IF =7.5 A, V_GS = 0
diF/ dt = 100 A/µs
Rev.3.00, Mar.15.2005, page 2 of 11