HAT2210R Datasheet, PDF (10/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

HAT2210R, HAT2210RJ
• Common
Avalanche Test Circuit
Vin
10 V
V_DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
Avalanche Waveform
E_AR =
1
2
L • I_AP² •
V_DSS
V_{DSS –} V_DD
V_DD
I_AP
I_D
V_(BR)DSS
V_DS
V_DD
0
Switching Time Test Circuit
Vin Monitor
Rg
D.U.T.
Vout
Monitor
R_L
Vin
10 V
VDS
= 10 V
Switching Time Waveform
Vin ^10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
t_f
Rev.3.00, Mar.15.2005, page 10 of 11