HAT2210R Datasheet, PDF(3/12 Page) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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HAT2210R Datasheet, PDF (3/12 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching

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HAT2210R, HAT2210RJ

â¢ MOS2 & Schottky Barrier Diode

Item

Symbol Min

Drain to source breakdown voltage

V(BR)DSS

Gate to source leak current

IGSS

Zero gate voltage drain current

IDSS

Gate to source cutoff voltage

VGS(off)

1.4

Static drain to source on state

resistance

RDS(on)

Forward transfer admittance

|yfs|

Input capacitance

Ciss

Output capacitance

Coss

Reverse transfer capacitance

Crss

Total gate charge

Gate to source charge

Qgs

Gate to drain charge

Qgd

Turn-on delay time

td(on)

Rise time

Turn-off delay time

td(off)

Fall time

Schottky Barrier diode forward voltage VF

Bodyâdrain diode reverse

recovery time

trr

Notes: 4. Pulse test

Typ

1330

230

3.8

3.2

3.9

0.5

Max

Â±0.1

2.5

Unit

ÂµA

mâ¦

(Ta = 25Â°C)

Test Conditions

ID = 10 mA, VGS = 0

VGS = Â±12 V, VDS = 0

VDS = 30 V, VGS = 0

VDS = 10 V, ID =1 mA

ID =4 A, VGS = 10 V Note4

ID = 4 A, VGS = 4.5 V Note4

ID = 4 A, VDS = 10 V Note4

VDS = 10 V, VGS = 0,

f = 1MHz

VDD = 10 V, VGS = 4.5 V,

ID = 8 A

VGS = 10 V, ID = 4 A,

VDD â 10 V, RL = 2.5 â¦,

Rg = 4.7 â¦

IF = 3.5 A, VGS = 0 Note4

IF = 8 A, VGS = 0

diF/ dt = 100 A/Âµs

Rev.3.00, Mar.15.2005, page 3 of 11

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