HAT2168H Datasheet, PDF (8/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2168H
3
1
D=1
Normalized Transient Thermal Impedance vs. Pulse Width
Tc = 25°C
0.5
0.3
0.2
0.1 _0.1
0.05
0.03
0.01
0.02
0.01
1shot
pulse
10 µ
100 µ
θch - c(t) = γs (t) • θch - c
θch - c = 8.33°C/ W, Tc = 25°C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
1
10
Pulse Width PW (s)
Rev.6.00, Jun.02.2003, page 8 of 10