HAT2168H Datasheet, PDF (3/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2168H
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V_(BR)DSS 30
Gate to source breakdown voltage V_(BR)GSS ±20
Gate to source leak current
I_GSS
—
Zero gate voltage drain current I_DSS
—
Gate to source cutoff voltage
V_GS(off) 1.0
Static drain to source on state
R_DS(on) —
resistance
R_DS(on) —
Forward transfer admittance
|y_fs|
30
Input capacitance
Ciss —
Output capacitance
Coss —
Reverse transfer capacitance
Crss —
Gate Resistance
Rg
—
Total gate charge
Qg
—
Gate to source charge
Qgs —
Gate to drain charge
Qgd —
Turn-on delay time
t_d(on)
—
Rise time
t_r
—
Turn-off delay time
t_d(off)
—
Fall time
t_f
—
Body–drain diode forward voltage V_DF
—
Body–drain diode reverse
recovery time
t_rr
—
Notes: 4. Pulse test
Typ Max Unit Test Conditions
—
—
V
I_D = 10 mA, V_GS = 0
—
—
V
—
±10 µA
—
1
µA
—
2.5 V
6.0 7.9 mΩ
8.8 13.5 mΩ
50
—
S
1730 —
pF
400 —
pF
130 —
pF
0.55 —
Ω
11
—
nc
5
—
nc
2.4 —
nc
8
—
ns
20
—
ns
40
—
ns
4
—
ns
0.85 1.10 V
25
—
ns
I_G = ±100 µA, V_DS = 0
V_GS = ±16 V, V_DS = 0
V_DS = 30 V, V_GS = 0
V_DS = 10 V, I _D = 1 mA
I_D = 15 A, V_GS = 10 V ^Note4
I_D = 15 A, V_GS = 4.5 V ^Note4
I_D = 15 A, V_DS = 10 V ^Note4
V_DS = 10 V
V_GS = 0
f = 1 MHz
V_DD = 10 V
V_GS = 4.5 V
I_D = 30 A
V_GS = 10 V, I_D = 15 A
V_DD ≅ 10 V
R_L = 0.67 Ω
Rg = 4.7 Ω
IF = 30 A, V_GS = 0 ^Note4
IF = 30 A, V_GS = 0
diF/ dt = 100 A/ µs
Rev.6.00, Jun.02.2003, page 3 of 10