HAT2168H Datasheet, PDF (7/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2168H
Reverse Drain Current vs.
Source to Drain Voltage
50
10 V
40
5V
V_GS = 0
30
20
10
Pulse Test
0
0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V_SD (V)
Maximum Avalanche Energy vs.
Channel Temperature Derating
25
I _AP = 15 A
20
V _DD = 15 V
duty < 0.1 %
Rg > 50 Ω
15
10
5
0
25 50 75 100 125 150
Channel Temperature Tch (˚C)
Vin
15 V
Avalanche Test Circuit
V DS
Monitor
Rg
50 Ω
L
I AP
Monitor
D. U. T
VDD
Avalanche Waveform
E_AR =
1
2
L • I_AP² •
V_DSS
V_DSS - V _DD
I _AP
I_D
V_(BR)DSS
V_DS
VDD
0
Rev.6.00, Jun.02.2003, page 7 of 10