HAT2168H Datasheet, PDF (1/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2168H
Silicon N Channel Power MOS FET
Power Switching
Features
• High speed switching
• Capable of 4.5 V gate drive
• Low drive current
• High density mounting
• Low on-resistance
R_DS(on) = 6.0 mΩ typ. (at V_GS = 10 V)
Outline
LFPAK
5
D
4
G
SSS
12 3
5
1 ²³⁴
1, 2, 3 Source
4
Gate
5
Drain
REJ03G0046-0600Z
Rev.6.00
Jun.02.2003
Rev.6.00, Jun.02.2003, page 1 of 10