HAT2168H Datasheet, PDF (6/10 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET Power Switching

HAT2168H
Body-Drain Diode Reverse
Recovery Time
100
50
20
10
0.1
di/dt = 100 A/µs
V_GS = 0, Ta = 25°C
0.3 1 3 10 30 100
Reverse Drain Current I _DR (A)
10000
Typical Capacitance vs.
Drain to Source Voltage
3000
1000
300
100
Ciss
Coss
Crss
30 _{VGS = 0}
f = 1 MHz
10
0 5 10 15 20 25 30
Drain to Source Voltage V _DS (V)
Dynamic Input Characteristics
50
20
I _D = 30 A
40
V _DD = 25 V
30 _VDS
10 V
5V
V_GS ¹⁶
12
20
8
10
V _DD = 25 V
4
10 V
5V
0
0
8
16 24
32 40
Gate Charge Qg (nc)
Switching Characteristics
100
tr
t _d(off)
30
10
t _d(on)
tf
3
V_GS = 10 V , V_DS = 10 V
1 ^{Rg = 4.7 Ω, duty < 1 %}
0.1 0.2 1 2 10 30 100
Drain Current I _D (A)
Rev.6.00, Jun.02.2003, page 6 of 10